Degradation of Algan Hemts Role of Metal Diffusion and Inverse Polarization Effects | Center for Embedded Systems | SIU

PI: Shaikh Ahmed
Type: New

Computationally investigate how performance degradation (reliability) of state-of-the-art AlGaN high electron mobility transistors (HEMTs) is governed by an intricate coupling of the underlying thermo-electro-mechanical processes while operating at high power and/or high-temperature.